tsm 19n20 200v n-channel power mosfet 1/4 version: a12 to - 252 (dpak) product summary v ds (v) r ds(on) (m ? ) i d (a) 200 92 @ v gs =10v 18 features advanced trench technology low r ds(on) 92m ? (max.) low gate charge typical @ 55nc (typ.) low crss typical @ 73pf (typ.) block diagram n-channel mosfet ordering information part no. package packing TSM19N20cp rog to-252 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v continuous drain current @ t c =25c i d 18 a drain current pulsed (note 1) i dm 72 a avalanche current i as 8 a avalanche energy, l=10mh e as 320 mj maximum power dissipation @ t c =25c p d 48 w storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c * limited by maximum junction temperature thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.6 o c/w thermal resistance - junction to ambient r ? ja 50 o c/w notes: surface mounted on fr4 board t 10sec pin definition : 1. gate 2. drain 3. source
tsm 19n20 200v n-channel power mosfet 2/4 version: a12 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 200 -- -- v drain-source on-state resistance v gs = 10v, i d = 10a r ds(on) -- 80 92 m ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 -- 4 v zero gate voltage drain current v ds = 160v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na dynamic total gate charge v ds = 100v, i d = 10a, v gs = 10v q g -- 55 -- nc gate-source charge q gs -- 18 -- gate-drain charge q gd -- 17 -- input capacitance v ds = 30v, v gs = 0v, f = 1.0mhz c iss -- 2300 -- pf output capacitance c oss -- 145 -- reverse transfer capacitance c rss -- 73 -- switching turn-on delay time v gs = 10v, v ds = 100v, r g = 3 ? t d(on) -- 17 -- ns turn-on rise time t r -- 12 -- turn-off delay time t d(off) -- 28 -- turn-off fall time t f -- 10 -- drain-source diode characteristics and maximum rati ng drain-source diode forward voltage v gs =0v, i s =10a v sd -- -- 1.3 v reverse recovery time i s = 10a, t j =25 o c di/dt = 100a/us t fr -- 82 -- ns reverse recovery charge q fr -- 276 -- nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ja is the sum of the junction-to-case and case-to-amb ient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja shown below for single device operation on fr-4 in still air
tsm 19n20 200v n-channel power mosfet 3/4 version: a12 to-252 mechanical drawing unit: millimeters
tsm 19n20 200v n-channel power mosfet 4/4 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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